silicon bridge rectifiers prv : 50 - 1000 volts i o : 25 amperes features : * high current capability * high surge current capability * high reliability * low reverse current * low forward voltage drop * ideal for printed circuit board mechanical data : * case : molded plastic with heatsink integrally mounted in the bridge encapsulation * epoxy : ul94v-o rate flame retardant * terminals : plated .25" (6.35 mm). faston * polarity : polarity symbols marked on case * mounting position : bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * weight : 17.1 grams maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. symbol br25005 br2501 BR2502 br2504 br2506 br2508 br2510 units maximum recurrent peak reverse voltage v rrm 50 100 200 400 600 800 1000 volts maximum rms voltage v rms 35 70 140 280 420 560 700 volts maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 volts maximum average forward current tc = 55 c i f(av) 25 amps. peak forward surge current single half sine wave superimposed on rated load (jedec method) i fsm 300 amps. current squared time at t < 8.3 ms. i 2 t 375 a 2 s maximum forward voltage per diode at i f = 12.5 amp. v f 1.1 volts maximum dc reverse current ta = 25 c i r 10 m a at rated dc blocking voltage ta = 100 c i r(h) 200 m a typical thermal resistance (note 1) r q jc 1.45 c/w operating junction temperature range t j - 40 to + 150 c storage temperature range t stg - 40 to + 150 c notes : 1. thermal resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) al.-finned plate rating metal heatsink f 0.728(18.50) 0.688(17.40) 0.570(14.50) 0.530(13.40) 0.685(16.70) 0.618(15.70) 1.130(28.70) 1.120(28.40) 0.210(5.30) 0.200(5.10) 0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71) 0.252(6.40) 0.248(6.30) 0.905(23.0) 0.826(21.0) 0.100(2.50) 0.090(2.30) 0.310(7.87) 0.280(7.11) ? br25005 thru br2510 cumsumi semiconductor international ? 1/2 mar-14,2006,rev.3 w w w . c u m s u m i . c o m r o h s c o m p l i a n t br unit: inch(mm) free datasheet http:///
fig.1 - derating curve for output fig.2 - maximum non-repetitive peak rectified current forward surge current 0 25 50 75 100 125 150 175 case temperature, ( c) number of cycles at 60hz fig.3 - typical forward characteristics fig.4 - typical reverse characteristics per diode per diode 15 10 5 30 25 100 10 1.0 200 0 300 0 150 100 50 0.1 10 80 0.01 0.01 1.0 0.1 100 140 0 20 40 60 120 percent of rated reverse voltage, (%) peak forward surge current, amperes average forward output current, amperes forward current, amperes reverse current, microamperes t j = 25 c pulse width = 300 m s 1 % duty cycle 8.3 ms single half sine wave jedec method t j = 50 c t j = 100 c t j = 25 c 20 250 10 20 60 1 2 4 6 40 100 1.2 1.4 1.8 0.4 0.6 0.8 1.0 1.6 heat-sink mounting, tc 5" x 6" x 4.9" thk. (12.8cm x 15.2cm x 12.4cm) al.-finned plate forward voltage, volts cumsumi semiconductor international ? 2/2 mar-14,2006,rev.3 w w w . c u m s u m i . c o m ? br25005 thru br2510 free datasheet http:///
|
